New transistor structures are required for lower power consumption, faster speeds, and higher integration of semiconductor integrated circuits, which underpin the digital society. In the future, it is expected that low-dimensional materials such as ultra-thin nanosheets, two-dimensional materials, and one-dimensional materials will be used as the channel materials for transistors. In addition, low-dimensional materials are expected to be used as the key materials for novel semiconductor devices such as various sensors and optical devices owing to their unique electronic structures. This objective aims at establishing the fundamental technologies necessary for the utilization of low-dimensional materials in new semiconductor device structures.
Strategic Planning, Research and Development Division